The time dependent dielectric breakdown of tunneling oxide used for EEPROM's is investigated.
阐述了应用于EEPROM中的超薄隧道氧化层随时间的击穿特性。
The traps are easily generated because of poor quality of TEOS. Besides, high electric field due to the horn of the channel could seriously damage the tunneling oxide.
再加上因为通道尖角造成的局部大电场会对穿隧氧化层造成极大的伤害，所以特性并不理想。
Secondly, the transient characteristics of FN tunneling and hot hole (HH) stress induced leakage current (SILC) in ultra-thin gate oxide are investigated respectively in this dissertation.
其次，本文分别研究了FN隧穿应力和热空穴（HH）应力导致的超薄栅氧化层漏电流瞬态特性。
应用推荐