...电子的源电极(source electrode)，一个极薄的绝缘层(~1 奈米厚，大约 是一排十个原子左右)所形成的穿隧接面(tunneling junction)用以隔开源电极与一 个尺寸很小的岛，以及一个闸极电极(gate electrode)。
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Magnetic tunneling junction 磁性隧道结 ; 磁性穿隧接面
mim tunneling junction mim隧道结
ferroelectric tunneling junction 铁电隧穿结
multiple tunneling junction 多隧穿结
Magnetoresistant tunneling junction 穿隧磁阻元件
light emission tunneling junction 隧道发光结
The structure, fabrication technology and light emission properties of double barrier MIMIS tunneling junction are discussed.
讨论了硅基双势垒金属绝缘层金属绝缘层半导体 （MIMIS）隧道发光结的结构、制备方法及发光特性。
We discuss the quantum characteristics of superconductor tunneling junction (SIS) during its transition from zero voltage state to normal state.
本文讨论了超导隧道结(SIS)从零电压态跃迁到正常态过程的量子特征。
Taking into account the spin polarized and interface roughness scattering effect, within scattering formalism, we calculate the shot noise in the ferromagnet superconductor tunneling junction.
考虑到铁磁层中的自旋极化效应与粗糙界面散射效应，利用散射理论，讨论铁磁超导隧道结中的散粒噪声。
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