If the tunnel junction capacitance becomes larger, the amplitude of the I-V curve of single-electron transistor becomes smaller, but the period is unchanged.
同时，单电子三极管I-V曲线的振幅随着隧道结电容的增大而减小，但I-V曲线的周期保持不变。
The invention provides a memory cell transistor having multi-layer tunnel insulator and memory device.
本发明提供一种具有多层隧道绝缘体的存储器单元晶体管及存储器器件。
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