...下一代手机晶片平台竞争力将更甚以往。挟制程领先优势,英特尔计划于2013年发表新一代行动装置晶片平台--Silvermont,将采用现今最先进的22奈米和三闸极(Tri-Gate)电晶体技术,可望解决过往最为人诟病的功耗与尺寸问题,并与ARM处理器阵营的28奈米方案相互匹敌。
基于4个网页-相关网页
Tri-gate Transistor 电晶体 ; 三栅极晶体管 ; 采用三栅极晶体管技术 ; 三闸晶体管
Tri-Gate MOSFET 三栅MOSFET
tri-gate transistors 三闸晶体管
Tri-state Gate 三态门
tri state gate 三态门
tri-state logic gate 三态逻辑门
The Tri-Gate transistors have "fins" that project into the third dimension, above the plane of the chip, enabling even more transistors to be fit into the same area.
三栅晶体管“鳍”映射到三维上,使得更多的晶体管放入到同一区域。
Intel claimed a breakthrough in transistor technology by announcing that it was ready to use its 3D Tri-Gate chip, first unveiled in 2002, in high-volume manufacturing.
英特尔公司(Intel)称其在晶体管技术中取得了重大突破——应用三栅级晶体管技术的3D芯片将进入量产阶段。 该技术首次亮相于2002年。
In May Intel, an American chip giant (co-founded, as it happens, by Dr Moore), announced plans to commercialise a technological fix of this sort under the marketing name "Tri-Gate".
5月,美国芯片巨头因特尔(Intel)公司(由摩尔博士与他人共同创办)宣布了一个计划,将这种市场名为“三栅极”的晶体管技术方案商业化。
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