... trench double diffusion mos 隔离槽双扩散金属氧化物半导体 trench etching 槽腐蚀 trench isolated ic 槽隔离集成电路 ...
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Correct selection of source gases and their compositions is one of the critical factors for si trench etching.
源气体及组分的选择是硅槽刻蚀技术的关键因素。
The principle of Si trench etching is introduced, and major press factors to influence etching results are examined.
介绍了硅深槽刻蚀的基本原理和影响对蚀效果的几个主要工艺因素。
By optimizing DRIE parameters and RIE etching the trenches' opening, the ideal trench profile is obtained to ensure that the trenches are fully refilled without voids.
采用经过参数优化的DRIE刻蚀深硅槽，并用反应离子刻蚀(RIE)对深槽开口形状进行修正，制造了具有理想侧壁形状的深槽，利于介质的完全填充，避免产生空洞。
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