... transistor short-pulse power rating 晶体管短脉冲额定功率 transistor stability 晶体管稳定性 transistor structure 晶体管结构 ...
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The thin film transistor of the invention has the advantages of small photosensitive degeneration, high migration rate, fast response speed, flexibility and good stability of performance.
本发明的薄膜晶体管具有光敏退化性小、迁移率高，响应速度快、柔性可弯曲、性能稳定性好的优点。
The present invention can reduce the hot electron effect in low-temperature polysilicon film transistor effectively and raise the stability of low-temperature polysilicon film transistor obviously.
运用本发明，可有效地降低公知低温多晶硅薄膜晶体管的热电子效应，使得低温多晶硅薄膜晶体管在工作时的稳定性能够有明显的改善。
It makes use of digital pulse IC circuits to replace the old transistor oscillator circuits and has great improvement in stability, security and convenience.
它采用数字脉冲集成电路取代早先的晶体管震荡电路，性能更稳定，操作更安全、方便。
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