n-p-n transistor n-p- 晶体管 ; 型晶体管
transistor n-p-n 晶体管
n-p-n two junction transistor n-p- 双结晶体管
n-p-n two junction transistor n-p-n 双结晶体管
n p n transistor 晶体管
junction n transistor 面结型晶体管 ; 连结式晶体管
The model considers the drift velocity saturation of carriers and influence of parasitic bipolar transistor. As a result, electric field profile of n drift in LDMOS at on state is obtained.
该模型考虑了载流子的速度饱和现象和寄生双极性晶体管的影响，获得了开态下LDMOS 漂移区中的电场分布。
A semiconductor device structure (10) uses two semiconductor layers (16 & 20) to separately optimize N and P channel transistor carrier mobility.
一种半导体器件结构（10），其使用两个半导体层（16&20）以 分别优化N和P沟道晶体管载流子迁移率。
应用推荐