depletion mode N-channel transistor 耗尽模N型沟道晶体管
silicon n photoelectric transistor 硅光电晶体管
junction n field effect transistor 面结型场效应晶体管
silicon n field-effect transistor 硅场效应晶体管
silicon n transistor 硅晶体管
diffusion n transistor 扩散晶体管
Darlington n Transistor 达林顿晶体管
n-type transistor n型晶体管
grown n junction transistor 生长结晶体管
silicon n switch transistor 硅开关晶体管
The model considers the drift velocity saturation of carriers and influence of parasitic bipolar transistor. As a result, electric field profile of n drift in LDMOS at on state is obtained.
该模型考虑了载流子的速度饱和现象和寄生双极性晶体管的影响，获得了开态下LDMOS 漂移区中的电场分布。
A semiconductor device structure (10) uses two semiconductor layers (16 & 20) to separately optimize N and P channel transistor carrier mobility.
一种半导体器件结构（10），其使用两个半导体层（16&20）以 分别优化N和P沟道晶体管载流子迁移率。
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