Hydrogenated silicon film attracts extensively attention due to its application on many kinds of microelectronic devices, such as infrared imaging system, solar cell and thin film transistor.
氢化硅薄膜由于在红外成像传感器、太阳能电池及薄膜晶体管等微电子器件中有着广泛应用前景而备受关注。
The invention provides a memory cell transistor having multi-layer tunnel insulator and memory device.
本发明提供一种具有多层隧道绝缘体的存储器单元晶体管及存储器器件。
Level restoration pass-transistor logic is proposed for low speed cell while dynamic transmission gate logic for high speed cell.
低速单元采用带有电平恢复的传输管逻辑实现，高速单元采用动态传输门逻辑实现。
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