If you're a frequent reader you're surely well aware of the potential of spin torque transfer memory, or STT-MRAM, and how spin-polarized magnetic currents (and the electrons they love to caress) might hold the potential to revolutionize storage as we know it.

ENGADGET: IBM's prototype STT MRAM device spins your bits right round, baby, right round

TOKYO-Toshiba Corporation (TOKYO: 6502) today announced that the company has developed a prototype memory element for a spin transfer torque magnetoresistive random access memory (STT-MRAM) that achieves the world's lowest1 power consumption yet reported, indicating that it has the potential to surpass the power consumption efficiency of SRAM as cache memory.

ENGADGET: Toshiba goes perpendicular to solve MRAM's power issues, rethink cache memory

The ruling on Wednesday tossed out a fraud conviction against Rambus for withholding information from a chip industry consortium, which adopted Rambus' protocols for memory transfer without knowing Rambus had patents on the technology.

FORBES: Rambus Man Has His Day