In most applications the pre-set threshold temperature of probes with predetermined threshold levels and the temperature of the hot surface (of the medium) are not exactly the same.
在大多数预先设定的阈值与预定的临界水平和热表面(中期)温度探测器温度应用程序不完全相同。
Various MOSFET tests require making low current measurements. Some of these tests include gate leakage, leakage current vs. temperature, substrate to-drain leakage, and sub-threshold current.
各种MOSFET测试都要求进行弱电流的测量。这些测试包括栅极漏电、泄漏电流与温度的关系、衬底对漏极的漏电和亚阈区电流等。
Then the lowest occurring temperature must still be detectable, which implies that the threshold temperature of the infrared detector must be chosen to be very low.
接着发生的最低温度仍然必须检测，这意味着对红外探测器起点温度必须选择是非常低。
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