High-voltage electric field combined with high temperature may lead to thermal breakdown and ageing of insulator for ESP.
当这些淤积和堵塞发生，可能会因为过热和绝缘老化导致电机严重损坏。
Provided is an insulated gate bipolar transistor (IGBT) which occupies a small area and in which a thermal breakdown is suppressed.
本发明提供一种绝缘栅双极晶体管(IGBT)，所述绝缘栅双极晶体管占据小面积并且抑制热击穿。
In particular, as a high-power EMP is suddenly injected into a transistor, electrical or thermal breakdown can be definitely caused.
特别地，当一个高功率电磁脉冲突然加载在晶体管上时，会导致晶体管的电击穿或热击穿。
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