Triple resist technology which can pattern submicron patterns has been developed and used to fabricate submicron IC's successfully depending upon the native lithography equipment.
在现有国产光刻设备的基础上，研制成功了能够复印出亚微米图形的三层胶工艺，并用于制作亚微米电路。
Now, the present ion implantation technology, especially ion implantation equipment and systems, can not meet the needs in the manufacturing of deep submicron devices and circuits.
就目前而言，已有的离子注入技术(包括离子注入设备系统)尚不能满足甚亚微米器件和电路制造的需要。
The physics, structure and technology of the deep submicron MOS devices were given.
本文从器件物理、器件结构和工艺等三个方面介绍了深亚微米器件。
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