The semiconductor structure includes a semiconductor substrate, a trench in the semiconductor substrate.
该半导体结构包括半导体基板和所述半导体基板中的沟槽。
Disclosed is a method of forming a semiconductor structure that includes a discontinuous non-planar sub-collector having a different polarity than the underlying substrate.
本发明公开了一种形成半导体结构的方法，这种半导体结构包括具有与下面的衬底不同的极性的不连续的非平面副集电极。
The semiconductor device structure includes: a substrate having a first surface and a second surface;
介层，定义于所述基板内，且自所述第一表面延伸至所述第二表面；
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