The size distribution of the fault is gotten based on the data from the double bridge test structure.
首先基于双桥微电子测试结构,通过具体制造工艺得到数据,然后处理得到故障的粒径分布。
Based on the double bridge structure of microelectronics test pattern, the method of defect model parameter extraction is presented in this paper.
基于微电子测试双桥结构,本文给出了缺陷特征参数提取方法。
Henceforth, the article analyzes the necessity of the mode of the 4-terminal connection in the experiment of low resistance measurement using the double bridge.
本文采用两种实验方法对比测量可知通常的导线连接其接触点的电阻,并由此进行分析,阐述在双电桥测量低电阻实验中四端扭接法的必要性。
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