The structure of a vertical multiple-gate MOSFET based on bipolar technology is presented.

提出了一种基于双极工艺的纵向多面栅MOSFET的结构和工艺。

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A high accuracy temperature sensor is designed by applying the temperature characteristics of a substrate bipolar transistor in CMOS technology.

利用CMOS工艺下衬底型双极晶体管的温度特性，设计了一种精度较高的温度传感器。

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The paper expounds MOS system power element's characters, insulated gate bipolar transistor and integration type power element's technology and its applications.

本文阐述了MOS系列功率器件的特性、绝缘栅双极型晶体管和集成型功率器件技术，以及它们的应用。

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Lin, Justin, and Marie examined the semi-conductor industry, where the initial reliance on vacuum tubes was replaced by bipolar technology, which in turn was replaced by complementary metal-oxide semiconductors (CMOS).

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