The relations among the substrate impurity, magnetic domain characteristics and disk errors are further studied by the mathematical model.
利用该数学模型可进一步研究基片杂质与磁畴特性，以及盘片误码的关系。
A first impurity diffusion layer, which occupies a space within the semiconductor substrate, is provided separately apart from the floating gate by a predetermined distance.
在浮栅的两侧壁上，设置侧壁绝缘膜。第一杂质扩散层设置在半导体基板内，并与浮栅仅离规定的距离。
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