N an oxide of an element containing less oxygen than the common oxide formed by the element 低值氧化物
carbon suboxide, CO
The present invention further relates to a deep sub-micron MOS integrated circuit die comprising a thick-oxide transistor-based preamplifier.
本发明还涉及一种深亚微米mos集成电路管芯，包括基于厚氧化物晶体管的前置放大器。
The Schottky diode and the method of making same same can meet the requirements of metal-oxide-semiconductor process and be suitable for integrated production of sub-micro IC also.
该肖特基二极管及其制造方法能够满足金属氧化物半导体工艺的需求，并适用于亚微米集成电路的集成生产。
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