Modern advanced epitaxial growth technology has made the widely application of SiGe strained layer materials possible.
现代先进的外延技术使应变层锗硅材料的应用成为可能。
In this paper, the total energy in the strained layer with nonstrained capping layer is calculated using continuum model.
利用连续介质模型，计算有非应变盖层的应变外延层结构中单位面积的能量。
The dual polarization dual wavelength lasers with active layer of mixed strained layer quantum well are reported in this paper.
本文报道了以混合应变量子阱结构为有源区的激光器。
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