The flash memory AT29C040 has 4M bits storage capability,its accessing method is three storage structure “Logical Segment - Physical Segment - Page”.
大容量存储器AT29C040A拥有4M位的超大存储容量,其存储方式为“逻辑段-物理段-页”三级存储结构。
参考来源 - 智能卡硬件仿真系统的研究与设计·2,447,543篇论文数据,部分数据来源于NoteExpress
It won by dint of sheer processing power and massive data storage capability.
它是凭借强大的处理能力和大规模数据存储能力获胜的。
The relation between charge storage capability and reliability of electrolytic capacitors is discussed.
试图探讨铝电解电容器贮存电荷的能力与电容器可靠性之间的关系。
Therefore, the charge storage capability and charge stability can be optimized by reasonably regulating the thickness of the sample.
因此,合理地调控薄膜厚度,可以有效地优化驻极体的电荷储存能力及电荷稳定性。
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