Static Random Access Memories 静态随机存取记忆晶片 ; 静态随机存取存储器 ; 晶片
The Single Event Effect(SEE) simulation experiment was carried out on proton accelerators for Static Random Access Memories(SRAMs).
应用质子直线加速器进行了静态随机存取存储器（SRAM）的单粒子效应模拟实验研究。
Expermental methods were emphatically described for measuring the proton Single Event Upset (SEU) cross section in Static Random Access Memories (SRAMs).
描述了测量静态随机存取存储器质子单粒子翻转截面的实验方法。
应用推荐