MRAM, a next-generation memory based on magnetic materials, has emerged as an alternative to SRAM because it is non-volatile, cutting leak current during standby status.

ENGADGET: Toshiba goes perpendicular to solve MRAM's power issues, rethink cache memory

Introduction of this newly designed "normally-off" memory circuit with no passes for current to leak into cuts leak current to zero in both operation and standby without any specific power supply management.

ENGADGET: Toshiba goes perpendicular to solve MRAM's power issues, rethink cache memory

However, improving the performance of SRAM to match advances in mobile products results in increasing current leakage, both during operation and in standby mode, degrading power performance.

ENGADGET: Toshiba goes perpendicular to solve MRAM's power issues, rethink cache memory