The reasons were the insufficient La content of the target and the low sputtering yield of La.
造成这种现象的原因为：(1)靶材中La成分不足；(2)La的溅射产额低。
参考来源 - 磁控溅射法制备磷灰石型硅酸镧中低温SOFCs电解质薄膜·2,447,543篇论文数据，部分数据来源于NoteExpress
The sputtering yield per cluster ion is higher than that for monomer ion by a factor of more than 100.
离化团束的溅射产额比之单体离子束高100倍以上。
When the incident energy is higher than the threshold energy, however, the sputtering yield increases with the increase of the incident energy.
当入射原子的能量大于溅射阈值时，溅射产额随入射原子能量的增加而线性增大；
The higher sputtering yield would result from multiple collision, lateral sputtering and high density energy deposition of gas cluster ion beam.
气体离化团束的高溅射产额可能是由于多体碰撞、侧向溅射及高能量密度的照射引起的。
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