The Parasitic Capacitance C_(rss) of the dummy-gated VDMOS are smaller compared with the split gate VDMOS' in the same F_(ds).
在相同的漏源电压V_(ds)下,虚拟栅寄生电容C_(rss)要远小于分栅,而随着漏源电压的增加,虚拟栅的C_(rss)可趋近于0。
参考来源 - 功率VDMOS器件结构设计·2,447,543篇论文数据,部分数据来源于NoteExpress
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