台积电公司0.13微米嵌入式闪存制程采用与先前世代相同的分离闸（split-gate）闪存组件，不但制程升级十分容易，也与0.13微米逻辑制程中的泛用型制程（G）与低耗电量制程（LP）完全兼容，可确保客户在数据库与...
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Dual-bit Split Gate 双位对开门
split gate flash memory sgf闪速存储器
split-gate range tracker 分离闸式距离追踪器
split gate 裂口
Split-gate Flash 分栅闪存
giant ultra-split-gate comsccalmder 超高速巨型电脑
split leaf gate 分扇拼合闸门
The Parasitic Capacitance C_(rss) of the dummy-gated VDMOS are smaller compared with the split gate VDMOS' in the same F_(ds).
在相同的漏源电压V_(ds)下,虚拟栅寄生电容C_(rss)要远小于分栅,而随着漏源电压的增加,虚拟栅的C_(rss)可趋近于0。
参考来源 - 功率VDMOS器件结构设计·2,447,543篇论文数据，部分数据来源于NoteExpress
This split is represented by a diamond (a gate element or gateway in BPMN terminology) with a cross inside it.
这个分岔由一个内有十字的菱形表示(bpmn术语中的gate或者gateway)。
XOR gate: If the gate has a cross sign inside it, it's used to split one path into several paths.
XOR gate：如果gate中有一个十字，它就用于将一条流分叉为多条。
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