A ’spin valve’ effect is proposed for explaining the giant anisotropy of the out-of-plane MR and the evolution of the scaling parameters with the external field.
自旋阀效应被用来解释面外磁阻巨大的各向异性和标度参数随磁场的变化。
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Spin valve with bottom structure is compared with which with top structure.
最后对自旋阀的底钉扎和顶钉扎结构进行了比较。
The principle of the new microelectronic devices, spin transistor and spin valve transistor is reviewed.
介绍了新型微电子器件自旋晶体管和自旋阀晶体管的工作原理。
Optimizing the materials properties and structure parameters of giant magneto resistance (GMR) spin valve head is of key importance to application.
优化材料性能参数和自旋阀巨磁电阻磁头的结构参数是微磁器件实用化的关键。
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