Using two pin diodes,the 8-20 G Hz high power capacit y SPDT(single pole double throw) switch with a parallel structure was designed,simulated and fabricated.
采用两个pin二极管设计、仿真,制作了一个8～20 GHz并联结构的高功率容量的单刀双掷开关。
参考来源 - 宽带pin二极管单刀双掷开关的设计与实现·2,447,543篇论文数据，部分数据来源于NoteExpress
The Shunt configured switch of SPST and SPDT are implemented and measured.
并有实作与量测并联式的单刀单掷和单刀双掷开关。
In the thesis, the main research topic is mechanical switch, including SPST, SPDT and keyboard switch.
本设计中主要研究的是机械类开关，包括单刀单掷开关和单刀双掷开关及键盘开关。
An ultra low insertion loss GaAs MMIC RF SPDT switch based on full-ion-implantation technology is reported.
报道了利用离子注入技术研制出一种用于手机的超低插损砷化镓单片射频单刀双掷开关。
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