This can be explained by two major differences of the 800v drain-source voltage waveform.
这里有两条理由可以解释800伏特漏源极电压波形的两个差异。
As in case of drain-source voltage this method allows to associate the elements of the drain current waveform with its contribution to the whole spectrum.
就象漏源极电压的例子那样，用这种方法也可以找出漏极电流的哪一部分对电磁干扰频谱产生影响。
The 800v quasi resonant design with lower current peak and lower drain-source voltage during turning on of the MOSFET demonstrates advantages in conducted EMI spectra regarding the primary side.
拥有更低峰值电流和场效应晶体管漏源极开通电压的800伏特准谐振设计展示出一次侧传导电磁干扰降低的优势。
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