The annealing at the proper temperature may decrease the resistivity of SOI substrate obviously and also improve the resistivity of epitaxial transitional layer partly.
SOI衬底顶层硅呈现高阻状态，合适温度的退火可以明显降低SOI衬底顶层硅电阻率，也可部分减少外延高阻过渡层厚度。
SOI refers to the use of a layered silicon-insulator-silicon substrate in IC manufacturing, which is said to reduce parasitic device capacitance and improve performance.
SOI指的是在IC的制造过程中采用硅+绝缘层+硅的硅基体结构方式，这种结构方式的优势是可以减小器件的寄生电容并改善器件的性能。
If we select substrate temperature, laser power and the scan speed properly, we can get good crystallization. It is useful to the fabrication of SOI devices.
适当选择衬底温度、激光功率和扫描速度可望获得良好的结晶，它对SO I器件的制作是有意义的。
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