DSOI, bulk si and SOI MOSFETs are fabricated on the same die successfully using local oxygen implantation process.

通过局域注氧工艺，在同一管芯上制作了DSOI、体硅和SOI三种结构的器件。

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Both simulation and measurement prove that DSOI MOSFETs have the advantage of much lower thermal resistance of substrate and suffer less severe self heating effect than their SOI counterparts.

模拟和测量的结果证明DSOI器件与SO I器件相比，具有衬底热阻较低的优点，因而DSOI器件在保持SOI器件电学特性优势的同时消除了SO I器件严重的自热效应。

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