So in the level of valence electron structure,the reason that {111},{110} and {0001} are respective slip plane of A1,A2 and A3 model can be explained.
由此在价电子结构的层次上解释了A1,A2和A3型晶体发生滑移时的滑移面分别为{111),{110}和{0001}面的原因。
参考来源 - 相平面价电子结构及其在合金研究中的应用·2,447,543篇论文数据，部分数据来源于NoteExpress
It is found that opposite sign dislocations appear on the slip plane immediately ahead of the crack tip.
结果指出，在紧靠裂纹顶端的滑移面上出现和裂纹位错异号的位错。
The influence that the anchorage effect brings to the positive stress distribution on the slip plane will be considered.
考虑锚杆锚固作用对滑面上正应力分布的影响。
Tranagranular cracks result from deformation damage of grain, and its propagation mechanism is shear rupture along slip plane.
穿晶裂纹源于晶内形变损伤区，其扩展机制为沿滑移面的剪切断裂。
应用推荐