Single Event Upset 单粒子翻转
SRAM Single event upset SRAM单粒子翻转
Single Event Upset rate 单粒子翻转率
single event upset SEU 单粒子翻转
single event upset effects 单粒子翻转截面
single event multiple bit upset 单粒子多位翻转
single upset event 单粒子效应
Current Field Programmable Gate Array(FPGA) chip can only be erased and configured periodically and repeatedly during the Single Event Upset(SEU) error detection, and this is not a continuous error detection and correction method.
现有的现场可编程门阵列(FPGA)芯片在进行单粒子翻转(SEU)检错时，只能针对FPGA配置单元进行周期性重复擦写而不能连续检错纠错。
参考来源 - 一种SEU硬核检测电路的设计与实现·2,447,543篇论文数据，部分数据来源于NoteExpress
以上来源于: WordNet
The result of the experiments showed that this fault injector based on MCUsystem can simulate the effect of single event upset, and can succeed in fault injection to the system.
实验结果证明，此故障注入方法可以模拟单粒子事件对系统的影响，并能成功对系统注入故障。
The incident Angle dependences of the cross sections for single event upset and single event latchup are presented.
获得了单粒子翻转和单粒子闭锁截面与入射角度的依赖关系。
Two typical master-slave type D flip-flop of strong hardness to Single Event Upset(SEU) for radiation environment are introduced.
介绍了两种已有的主从型边沿D触发器，它们具有很强的抗单粒子翻转能力。
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