single electron tunneling 单电子隧道贯穿 ; 单电子透纳
single electron tunneling effect 单电子隧穿效应
single electron tunneling device 单电子隧道器件
The generation mechanisms of these physical phenomena of Coulomb blockade, Coulomb staircase, single electron tunneling were described with single electron transistor(SET) as the research object.
以单电子晶体管为研究对象，系统阐述了库仑阻塞、库仑台阶、单电子隧穿等物理现象的产生机理。
Based on the orthodox theory, a model of a single electron transistor (SET) of metallic tunneling junctions is built using the master equation method.
在正统理论的基础上，使用主方程法建立了金属结单电子晶体管的器件模型和算法流程。
Three kinds of different new approaches to construct nanometer sized double barrier tunneling junctions for room temperature single electron tunneling studies were reported.
利用针尖修饰及纳米组装技术，采用三种不同的新方法构造出串联双隧穿结结构。
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