The high quality SOI (silicon on insulator) materials were prepared with highly selective and self-stopping full isolation by porous oxidized silicon (FIPOS) technology.

采用高选择和自终止多孔氧化硅全隔离技术制备了高质量的SOI材料。

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The consortium's technology builds its transistors inside a sliver of pure silicon, laid on top of an insulator, which in turn sits on top of a standard wafer, the substrate on which transistors are constructed.

ECONOMIST: Transistors