The semiconductor junction diode comprises silicon, the silicon crystallized in contact with a silicide.

半导体结型二极管包括硅，所述硅与硅化物相接触时结晶化。

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It's shown that the C-V and I-V characteristics of silicon photovoltaic diode by forward bias are obviously different from forward characteristic of common PN junction diode by experiment.

通过实验发现高阻衬底浅结的紫外敏感硅光伏二极管的正向偏置c - V特性和I - V特性与一般PN结二极管的正向特性有明显地不同。

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An ordinary silicon rectifier diode consists of ap-n junction of which the player is the anode.

一个普通的硅整流二极管是由p - n结组成，这个结的p层是阳极。

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