... silicon insulated gate fet 硅绝缘栅场效应晶体管 silicon integrated circuit 硅集成电路 silicon junction transister 硅面结型晶体管 ...
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silicon integrated circuit bar 硅集成电路棒
silicon on sapphire integrated circuit 蓝宝石上硅集成电路 ; 硅蓝宝石集成电路
silicon monolithic integrated circuit 硅单片集成电路 ; 硅单块集成电路
silicon gate MOS integrated circuit 硅栅MOS集成电路
Metal-Oxide-Silicon Active Integrated Circuit 金属
silicon film integrated circuit 硅膜集成电路
silicon gate integrated circuit 硅栅集成电路
silicon bipolar integrated circuit 硅双极型集成电路
Based on the process optimization of the active layer materials,thermal evaporation and conventional silicon integrated circuit process were combined to fabricate OFET and the device’s characteristics are studied in this paper.
本论文在对有机场效应管有源层材料生长工艺进行优化的基础上,用真空热蒸发结合硅集成电路工艺的方法制备了有机场效应管,研究了器件的场效应性能。
参考来源 - 有机场效应管的制作及特性研究·2,447,543篇论文数据，部分数据来源于NoteExpress
Space Micro received application-specific integrated circuit (ASIC) devices in March from their silicon foundry and are under test and evaluation.
这种专用集成电路，目前正处于测试和评估阶段。
There is currently a major ongoing research effort about Silicon-based quantum dot devices because of their unique properties and compatible with mature Si integrated circuit.
硅基量子点器件由于其独特的性能以及和硅集成电路相容的特点成为研究的重点。
Silicon devices are compatible with integrated-circuit technology.
硅元件和集成电路技术是相容的。
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