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Conventional transistors use a metal electrode, called the gate, to control the flow of electrons through a planar channel in the silicon substrate.
传统晶体管使用一个叫做“栅极”的金属电极,以控制电子在平面硅基片上的沟道中的流动。
This paper reports the design and experiments of the low noise UHF electronic tuner consisting of a low noise dual-gate FET and a high merit silicon epitaxial varactor.
本文叙述采用双栅砷化镓场效应晶体管和高优值硅外延变容二极管实现UHF电子调谐器低噪声化的有关设计和实验结果。
The reliability of strain silicon, gate dielectric and copper interconnection are discussed, and some new researches are presented.
简介了应变硅材料、栅介质的工艺及铜互连的可靠性,并对新的研究方向做了介绍。
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