Si-based light emission devices are the key to realize optoelectric integration in VLSI and MEMS.
为实现超大规模集成电路和微机电系统(MEMS)中的光电集成，硅基发光器件的实现至关重要。
参考来源 - 基于PECVD工艺的硅基光致和电致发光器件研制·2,447,543篇论文数据，部分数据来源于NoteExpress
Si-based light-emitting materials are fundamental in optoelectronic integration.
硅基发光材料是光电子集成的基础材料。
Luminescence based on silicon has always been the key subject of the study of Si-based materials and devices.
硅基发光一直是硅基材料和器件研究的重要课题。
Thus, in 1967, SI adopted a more precise definition based on the frequency of the radiation a caesium atom emits when it flips between two energy states.
所以，在1967年，SI采用了一个更为精确的制定办法，该办法基于一个铯原子在两个能级之间跃迁时的辐射频率。
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