P-type semiconductor zinc oxide films, process for preparation thereof, and pulsed laser deposition method using transparent substrates.
型半导体氧化锌薄膜,其制备方法,和使用透明基片的脉冲激光沉积方法。
The smallest unit that supports electron flow in a semiconductor material ; a hole in P-type silicon or a free electron in N-type silicon.
多数载流子-一种载流子,在半导体材料中起支配作用的空穴或电子,例如在N型中是电子。
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