This paper presents a forward-bias capacitance measurement system based on HP 4274AL-C-R meter for extracting the parameters of interface states of metal-semiconductor contacts.
本文描述使用以阻抗测量仪为中心的正偏电容测量系统提取金属-半导体接触界面态参数的方法。
It is composed of two layers of semiconductor material, typically silicon, that are sandwiched together between metal contacts.
它由两层半导体晶硅材料合在一起夹在金属接触器之间。
In the Ohmic contacts of LED electrodes, carriers have different transmission mechanisms be - tween metal electrode and semiconductor.
在LED电极欧姆接触中，载流子在金属电极和半导体间有不同的传输机制。
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