On the near surface monocrystalline GaAs layer, a better Schottky contact with a barrier height of 0.7V has also been fabricated.
在近表面单晶层上作成了性能良好的肖特基接触，其势垒高度约为0.7V。
The research focused on the growth of SiGe single layer, multi-layers, metal induced growth of poly-SiGe, Schottky barrier diodes (SBDs) were fabricated.
包括锗硅单层、多层结构的外延生长、以及金属诱导生长多晶锗硅和肖特基二极管原型器件的制备。
The AES suggests that the interaction between gate metallization and GaAs active layer has taken place and the Schottky contact interface becomes ambiguous after stressing.
应力试验后的样品，肖特基势垒接触界面模糊，有明显的互扩散和反应发生．。
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