We propose a unified time scale algorithm for thermal effect of MESFET under irradiation of high power electromagnetic pulses.
提出高功率电磁脉冲作用下MESFET热效应分析的时间尺度统一算法。
The average nucleus nuclei gray scale of high irradiation dose was lower than that of low irradiation dose (P<0.05 ) .
高放射剂量组平均细胞核灰度值低于低放射剂量组（P＜0.05）。
Single Hard Errors and functional error were observed in SRAMs under proton irradiation. The explanation is reasonable for the relation between SHE and device integration scale.
实验观察到质子也可以导致存储器出现单个位的硬错误和器件功能错误，并对单个位的硬错误与器件集成度的关系提出了合理的解释。
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