... 金属-氧化物半导体场效应晶体管(MOSFET) 射频功率LDMOS晶体管(RF Power LDMOS) 射频功率VDMOS晶体管(RF Power VDMOS) ...
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RF high power LDMOS 射频大功率LDMOS
The output characteristics of the RF power LDMOS are greatly affected by the parasitic capacitance.
射频功率LDMOS的寄生电容直接影响器件的输出特性。
The new devices have twice the RF bandwidth of LDMOS, so that one power amplifier (PA) can support multiple operating frequencies.
新的设备具有的LDMOS的射频带宽的两倍,这样,一个功率放大器(PA)的可支持多个工作频率。
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