For preparing large area CIO films with low resistivity and high transmissivity, we studied the effect of oxygen density and substrate temperature on optical and electrical properties, respectively.
为了制备低电阻率、高透射率的大面积CIO薄膜，我们分别研究了溅射氧浓度和沉积衬底温度对CIO薄膜光电特性的影响。
The annealing at the proper temperature may decrease the resistivity of SOI substrate obviously and also improve the resistivity of epitaxial transitional layer partly.
SOI衬底顶层硅呈现高阻状态，合适温度的退火可以明显降低SOI衬底顶层硅电阻率，也可部分减少外延高阻过渡层厚度。
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