In this paper,we investigate into the design of PRAM(Phase Change Random Access Memory) and RRAM(Resistive Random Access Memory) in the quest for high density solutions of next generation nonvolatile memories.
本文以下一代非挥发存储器的高密度解决方案为中心,针对相变存储器和阻变存储器分别进行了探索性的研究。
参考来源 - 高密度非挥发存储体系的建模与设计·2,447,543篇论文数据，部分数据来源于NoteExpress
Resistive random access memory (RRAM) is one of the most promising candidates for next generation of non-volatile memory.
在各种新型非挥发性存储器中，阻变存储器(RRAM)具有成为下一代存储器的潜力。
The invention provides an organic resistive random access memory and a preparation method thereof, which belong to the technical field of very large scale integrated circuit.
本发明提供了一种有机阻变存储器及制备方法，属于超大规模集成电路技术领域。
The invention provides a polymorphic organic resistive random access memory and a preparation method, and belongs to the technical field of a super-large-scale integrated circuit.
本发明提供了一种有机阻变存储器及制备方法，属于超大规模集成电路技术领域。
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