... 寿命倒数 reciprocal lifetime 复合寿命 recombination lifetime 使用期限；服务期限；使用寿命 service life ...
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However the response times of traditional switches are limited due to the carrier recombination lifetime, carrier transit time in the device, and also the external RC time constant.
然而传统光开关因为多种因素限制了它们的响应时间,包括载流子复合寿命,载流子在器件内的输运时间,以及外部的RC时间常数。
参考来源 - 基于InGaAs/InP多量子阱中光学斯塔克效应的超快全光开关的研究·2,447,543篇论文数据，部分数据来源于NoteExpress
A method is presented for measuring the minority recombination Lifetime in MOS fet's by charge pumping effect.
本文介绍了应用电荷抽取效应测量MOS晶体管中少子复合寿命的方法。
Using these results, we discuss minority carrier lifetime and surface recombination velocity of some wafers.
可以使用这些结果讨论一些薄片的少子寿命和表面复合速度。
This paper calculates the expression between minority-carrier lifetime and switching time in short diode by analyzing the continuity equation when considering the surface recombination.
并使用连续性方程，在考虑表面复合过程的情况下，提出了短二极管的少子寿命计算公式。
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