extreme radiation hardness 强抗辐射
Radiation hardness assurance 抗辐射加固保障
With taking advantage of the model of two-stage H+ process of interface trap formation and the role that F play in radiation hardness in gate-oxide . the above-mentioned result is deeply analyzed.
借助界面态建立的H~+两步模型和F在栅氧化层中对抗辐照加固所起的作用对上述结果进行了深入的分析。
参考来源 - BF·2,447,543篇论文数据，部分数据来源于NoteExpress
SONOS flash memory has numerous advantages, such as excellent salability, high endurance, low power, radiation hardness, and is highly compatible with standard CMOS technologies.
SONOS闪存拥有许多优势，如极好的销路、高持久性、低动力支持、辐射硬度和拥有标准CMOS技术的高压缩性。
In this paper, a 10k-gate radiation tolerant CMOS gate array has been developed to assess the intrinsic radiation hardness of circuits built at standard commercial CMOS foundries.
本文利用标准的商业CMOS工艺，设计了一个1万门的抗辐射加固的CMOS门阵列，用以评估商业工艺线制造的电路的抗辐射水平。
With taking advantage of the model of two-stage H+ process of interface trap formation and the role that F play in radiation hardness in gate-oxide . the above-mentioned result is deeply analyzed.
借助界面态建立的H~+两步模型和F在栅氧化层中对抗辐照加固所起的作用对上述结果进行了深入的分析。
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