self-assembled growth SiGe quantum dots 自组织生长SiGe岛
A numerous papers covering different aspects of quantum dot infrared photodetector (QDIP) such as quantum dot growth, system design, modeling, characterization and testing, have been published so far.
迄今为止关于量子点红外光子探测器(QDIP)的研究已有众多文献发表,涉及量子点生长、系统设计、建模、表征与测量等各方面。
This paper introduces ultimate principles of self organized growth of nanometer quantum dots, self organized growth mechanism of various quantum dots, and their photoluminescence properties.
文中主要介绍了量子点自组织生长的基本原理、几种不同类型量子点的自组织生长及其光致发光特性。
The growth and the electronic state of quantum dots, quantum size-dependent effects, Coulomb blockade effects and dielectric effects are described.
对玻璃中半导体量子点的生长过程、量子点的电子态,量子尺寸效应、库仑阻塞效应及介电效应,做了比较全面的介绍。
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