By Fourier transform, produces a fast and accurate calculation for dose precompensation in proximity effect correction for electron beam lithography.

将付里叶变换法运用于电子束曝光的邻近效应校正中，形成了快速、准确的剂量校正法。

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The present results not only can help to optimize the exposure conditions in Electron Beam Lithography, but also supply more accurate data for proximity effect correction.

本文的模拟结果不仅能为高能电子束光刻工艺优化曝光条件、降低邻近效应提供理论指导，而且能为进一步的邻近效应的校正提供更精确的数据。

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Furthermore, the parameters acquired by this method are successfully used for proximity effect correction in electron beam lithography on the same experimental conditions.

此外，用此方法提取的电子散射参数被成功地用于相同实验条件下的电子束临近效应校正。

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