其实有read disturb(读取干扰),自然就会有program disturb(编程干扰),所以如今的颗粒,都是要连续编程的,比如从page 0开始连续到page 127,绝对必能出现page 0 , page 3 , page 2等这种穿插的情...
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With given program condition, Vt could higher than 6V after 0.1ms program and Vt decrease could lower than 0.1V after control gate or drain stress 10s, so cell program speed and program disturb characteristic could reach target.
在一定的编程条件下,编程0.1ms时器件的阈值电压能够大于6V,控制栅或漏极加电压10s时阈值电压退化量小于0.1V,因此器件的编程速度和编程串扰特性能够满足要求。
参考来源 - 0.5μm OTP工艺开发与器件特性研究·2,447,543篇论文数据,部分数据来源于NoteExpress
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