A new method for post treatment of porous silicon, sulfur passivation by microwave plasma assistance in vacuum, is reported in this paper.
报道了对多孔硅进行后处理的一种新方法，即真空中微波等离子体辅助的硫钝化处理。
In this paper, thermal post-treatment for infrared rapid isothermal annealed boron-implanted silicon was studied.
本文研究了硼离子注入硅经红外辐照退火后的热处理特性。
It is assumed that electron tunneling from silicon into oxide and buildup of interface states are the post-irradiation recovery.
假设隧道电子从硅进入氧化层和界面态的建立是辐射效应的恢复机理。
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